PART |
Description |
Maker |
AOB27S60 AOT27S60 AOTF27S60 |
600V 27A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
IRGBC40 IRGBC40F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)
|
International Rectifier
|
APT4016BVR |
POWER MOS V 400V 27A 0.160 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
APT8030 APT8030B2VFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 27A 0.300 Ohm
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT6015JN APT6018JN |
POWER MOS IV 600V 38.0A 0.15 Ohm / 600V 35.0A 0.18 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
APT6011B2VFR |
POWER MOS V 600V 49A 0.110 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
APT6015LVR |
POWER MOS V 600V 38A 0.150 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
APT6030 APT6030BVFR |
POWER MOS V 600V 21A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT6035BVR |
POWER MOS V 600V 18A 0.350 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT6015B2VR APT6015 |
POWER MOS V 600V 38A 0.150 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT6013JVR |
POWER MOS V 600V 40A 0.130 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|